PART |
Description |
Maker |
JANS2N2369AUB JANTXV2N2369AUB |
15 V, NPN, Si, SMALL SIGNAL TRANSISTOR TECHNICAL DATA SHEET
|
MICROSEMI CORP-LAWRENCE Microsemi Corporation
|
2N5330 SDT99703 2N4211 2N5616 SDT8302 2N5625 SDT16 |
30 A, 90 V, NPN, Si, POWER TRANSISTOR 300 V, NPN, Si, POWER TRANSISTOR 20 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-63 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3 30 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-63 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3 5 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-66 5 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-66 5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-66 20 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-63 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-61 10 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-3
|
SOLITRON DEVICES INC
|
2SA20881 2SB11321 2SB11841 2SB1198K1 2SB12601 2SB1 |
Medium power transistor (?60V, ?0.5A) Medium Power Transistor (?32V,?1A) Power Transistor (?60V, ?3A) Low-frequency Transistor (-80V, -0.5A) Power Transistor (?80V, ?1A) Low VCE(sat) Transistor (?20V, ?3A) Power transistor (?20V, ?2A) General purpose amplification (?30V, ?1A) Low frequency amplifier Medium power transistor (−60V, −0.5A)
|
ROHM[Rohm]
|
MBMK2520H1R0M |
Metal Wire-wound Chip Power Inductors (MCOIL, MB series H (High Spec.) type)
|
Taiyo Yuden (U.S.A.), I...
|
IPB100N08S2L-07 IPP100N08S2L-07 SP0002-19052 SP000 |
100 A, 75 V, 0.0068 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB OptiMOS? Power-Transistor OptiMOS㈢ Power-Transistor OptiMOSPower-Transistor
|
Infineon Technologies AG
|
MAKK2016HR33M |
Metal Core Wire-wound Chip Power Inductors (MCOIL, MA series H (High Spec.) type)
|
Taiyo Yuden (U.S.A.), I...
|
MAKK2016HR47M |
Metal Core Wire-wound Chip Power Inductors (MCOIL, MA series H (High Spec.) type)
|
Taiyo Yuden (U.S.A.), I...
|
MAKK2016HR24M |
Metal Core Wire-wound Chip Power Inductors (MCOIL, MA series H (High Spec.) type)
|
Taiyo Yuden (U.S.A.), I...
|
BFG11W BFG11W_X BFG11W/X |
Hook-Up Wire; Conductor Size AWG:20; No. Strands x Strand Size:10 x 30; Jacket Color:Gray; Cable/Wire MIL SPEC:MIL-W-76C Type MW; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes NPN 2 GHz power transistor
|
PHILIPS[Philips Semiconductors] NXP Semiconductors
|
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